System Level Benefits of Silicon Carbide Power Devices in Dc-dc Converters

نویسندگان

  • Burak Ozpineci
  • Leon M. Tolbert
  • S. Kamrul Islam
چکیده

The superior properties of Silicon Carbide (SiC) power devices compared to Silicon (Si) power devices are expected to have a significant impact on the next-generation power electronics systems. Some of these benefits include a large reduction in the size, weight, and cost of the power conditioning and/or thermal systems and passive components. In this paper, Si and SiC diode models will be derived and used in a dc-dc converter suitable for automotive applications, and the aforementioned benefits will be demonstrated.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Cree Silicon Carbide Power White Paper: Highly Efficient, and Compact ZVS Resonant Full Bridge Converter Using 1200V SiC MOSFETs

Rev. Abstract The most recent version (C2MTM) of Silicon Carbide (SiC) devices is used in a Zero Voltage Switching (ZVS) converter application. A 1200V, 160mohm SiC MOSFET from Cree Inc. is used to design a high-frequency ZVS LLC resonant fullbridge (FB) DC/DC converter. With the outstanding advantages of SiC MOSFET, which has lower junction capacitance and low-on-state resistor compared to a s...

متن کامل

Impact of Silicon Carbide Devices on the Powertrain Systems in Electric Vehicles

The DC/DC converters and DC/AC inverters based on silicon carbide (SiC) devices as battery interfaces, motor drives, etc., in electric vehicles (EVs) benefit from their low resistances, fast switching speed, high temperature tolerance, etc. Such advantages could improve the power density and efficiency of the converter and inverter systems in EVs. Furthermore, the total powertrain system in EVs...

متن کامل

Control Method of Impedance Network in SiC Power Converters for HEV/EV

Silicon carbide (SiC) devices provide significant performance improvements in many aspects, including lower power dissipation, higher operating temperatures, and faster switching, compared to conventional Si devices. All these features helped increase the interest in the applications of these devices for electric drive systems. The inclusion of an impedance network to elevate DC voltage would i...

متن کامل

Interleaved DC-DC Boost Converter with SiC Devices and Low-Capacitive Inductors

This paper describes a four-leg interleaved DC-DC boost converter built on the basis of Silicon Carbide (SiC) devices (Metal-Oxide Semiconductor Field-Effect Transistors—MOSFETs and Schottky diodes) and improved, low-capacitive magnetic components. A combination of wide-bandgap semiconductors capable of operating at elevated switching frequencies and an interleaving technique brings substantial...

متن کامل

DC Voltage Control and Power-Sharing of Multi-Terminal DC Grids Based on Optimal DC Power Flow and Flexible Voltage Droop Strategy

This paper develops an effective control framework for DC voltage control and power-sharing of multi-terminal DC (MTDC) grids based on an optimal power flow (OPF) procedure and the voltage-droop control. In the proposed approach, an OPF algorithm is executed at the secondary level to find optimal reference of DC voltages and active powers of all voltage-regulating converters. Then, the voltage ...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2003